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this is information on a product in full production. this is information on a product still in production but not recommended for new designs. august 2013 docid14079 rev 5 1/19 STD60N3LH5 n-channel 30 v, 0.0072 typ., 48 a stripfet? v power mosfet in a dpak package datasheet - not recommended for new design figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? very low switching gate charge ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is an n-channel power mosfet developed using stmicroelectronics? stripfet?v technology. the device has been optimized to achieve very low on-state resistance, contributing to a fom that is among the best in its class. 1 3 tab dpak $0y '7$% * 6 order code v ds @ tjmax r ds(on) max i d STD60N3LH5 35 v 0.008 48 a table 1. device summary order code marking packages packaging STD60N3LH5 60n3lh5 dpak tape and reel www.st.com
contents STD60N3LH5 2/19 docid14079 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid14079 rev 5 3/19 STD60N3LH5 electrical ratings 19 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v ds drain-source voltage @ t jmax 35 v v gs gate-source voltage 20 v i d (1) 1. limited by wire bonding. drain current (continuous) at t c = 25 c 48 a i d drain current (continuous) at t c = 100 c 42.8 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 192 a p tot total dissipation at t c = 25 c 60 w derating factor 0.4 w/c e as (3) 3. starting t j = 25 c, i d = 24 a, v dd = 12 v. single pulse avalanche energy 160 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case max. 2.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu thermal resistance junction-pcb max. 50 c/w
electrical characteristics STD60N3LH5 4/19 docid14079 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30 v, t c = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.8 3 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 24 a 0.0072 0.008 v gs = 5 v, i d = 24 a 0.0088 0.011 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =25 v, f=1 mhz, v gs =0 - 1350 1620 pf c oss output capacitance - 265 318 pf c rss reverse transfer capacitance -3238pf q g total gate charge v dd =15 v, i d = 48 a v gs =5 v ( figure 14 ) - 8.8 12.3 nc q gs gate-source charge - 4.7 6.6 nc q gd gate-drain charge - 2.2 3.1 nc q gs1 pre v th gate-to-source charge v dd =15 v, i d = 48 a v gs =5 v ( figure 19 ) -2.23.1nc q gs2 post v th gate-to-source charge -2.53.5nc r g gate input resistance f = 1 mhz, gate dc bias = 0, test signal level = 20 mv, i d = 0 -1.11.3
docid14079 rev 5 5/19 STD60N3LH5 electrical characteristics 19 table 6. switching on/off (resistive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =10 v, i d = 24 a, r g =4.7 , v gs = 10 v ( figure 13 and figure 18 ) -6 -ns t r rise time - 33 - ns t d(off) turn-off delay time - 19 - ns t f fall time - 4.2 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 48 a i sdm source-drain current (pulsed) (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% - 192 a v sd forward on voltage i sd =24 a, v gs =0 - 1.1 v t rr reverse recovery time i sd =48 a, di/dt =100 a/s, v dd =20 v, ( figure 15 ) -25 ns q rr reverse recovery charge - 18.5 nc i rrm reverse recovery current - 1.5 a
electrical characteristics STD60N3LH5 6/19 docid14079 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance , ' 9 '6 9 $ 2shudwlrqlqwklvduhdlv /lplwhge\pd[5 '6rq ?v pv pv 7m ?& 7f ?& 6lqjoh sxovh +9 i d 60 40 20 0 0 v gs (v) 3 (a) 1 2 80 100 120 140 160 4 5 am03360v1
docid14079 rev 5 7/19 STD60N3LH5 electrical characteristics 19 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics
test circuits STD60N3LH5 8/19 docid14079 rev 5 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid14079 rev 5 9/19 STD60N3LH5 test circuits 19 figure 19. gate charge waveform
package mechanical data STD60N3LH5 10/19 docid14079 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid14079 rev 5 11/19 STD60N3LH5 package mechanical data 19 table 8. dpak (to-252) type a mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1.00 1.50 (l1) 2.80 l2 0.80 l4 0.60 1.00 r0.20 v2 0 8
package mechanical data STD60N3LH5 12/19 docid14079 rev 5 figure 20. dpak (to-252) type a drawing 0068772_k_type_a
docid14079 rev 5 13/19 STD60N3LH5 package mechanical data 19 table 9. dpak (to-252) type e mechanical data dim. mm min. typ. max. a2.18 2.39 a2 0.13 b0.65 0.884 b4 4.95 5.46 c0.46 0.61 c2 0.46 0.60 d5.97 6.22 d1 5.21 e6.35 6.73 e1 4.32 e2.286 e1 4.572 h 9.94 10.34 l1.50 1.78 l1 2.74 l2 0.89 1.27 l4 1.02
package mechanical data STD60N3LH5 14/19 docid14079 rev 5 figure 21. dpak (to-252) type e drawing 0068772_k_type_e
docid14079 rev 5 15/19 STD60N3LH5 package mechanical data 19 figure 22. dpak footprint (a) a. all dimensions are in millimeters footprint_rev_k
packaging mechanical data STD60N3LH5 16/19 docid14079 rev 5 5 packaging mechanical data table 10. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3
docid14079 rev 5 17/19 STD60N3LH5 packaging mechanical data 19 figure 23. tape for dpak (to-252) figure 24. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STD60N3LH5 18/19 docid14079 rev 5 6 revision history table 11. document revision history date revision changes 19-oct-2007 1 first release 23-sep-2008 2 v gs value has been changed on table 2 and table 5 20-apr-2009 3 ? inserted typical maximum value in v gs(th) parameter ? figure 5: transfer characteristics has been updated ? added device in to-220 05-apr-2011 4 ? added device in short ipak ? added max values in table 5: dynamic ?v gs value has been changed in table 2 and table 4 09-aug-2013 5 the part numbers stp60n3lh5, stu60n3lh5 and stu60n3lh5-s have been moved to a separate datasheet
docid14079 rev 5 19/19 STD60N3LH5 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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